中图分类号：TN402 文献标志码：A DOI: 10.16157/j.issn.0258-7998.257289
中文引用格式： 王滔，郭建刚，何泉初，等. 基于动态自刷新和扩展汉明的纠错机制[J]. 电子技术应用，2026，52(7)：63-67.
英文引用格式： Wang Tao，Guo Jiangang，He Quanchu，et al. Error correction mechanism based on dynamic self-refreshing and extended Hamming code[J]. Application of Electronic Technique，2026，52(7)：63-67.

Error correction mechanism based on dynamic self-refreshing and extended Hamming code

Abstract： In the irradiation scenario, data inversion may occur in the storage unit. To enhance data reliability, a correction mechanism based on dynamic self-refreshing and extended Hamming code is designed. This circuit consists of an encoding module, a decoding and error correction module, a data storage module, and a dynamic self-refreshing management module. It has the function of correcting one-bit errors and detecting two-bit errors, as well as low dynamic power consumption. The mechanism is implemented using Verilog hardware description language and a simulation verification system is built. Simulation results show that this error correction mechanism can effectively correct single-bit errors and detect and report double-bit errors, improving the reliability of the storage unit. This mechanism has been widely applied in the switching chips developed by our company and has passed the irradiation upset test, verifying its effectiveness.

Key words : dynamic self-refreshing；extended Hamming code；high reliability；error detection and correction