中图分类号：TN710.2文献标识码：ADOI:10.19339/j.issn.1674-2583.2026.01.006
中文引用格式：陈石平，郑健超. 基于带隙基准的高端理想二极管研究［J］.集成电路应用，2026，43（01）：39-44.
英文引用格式：CHEN Shiping, ZHENG Jianchao. Research on highside ideal diode based on bandgap reference［J］.Application of IC，2026，43（01）：39-44.

Research on highside ideal diode based on bandgap reference

Abstract： The ambient temperature has an important influence on the performance of the circuit. Aiming at the problem of temperature drift, this paper designs a high-side ideal diode based on bandgap reference. The circuit is composed of a high-side load switch MOS tube, a voltage comparator and a bandgap reference voltage module. The voltage comparator has priority hysteresis loop transmission characteristics, which can improve the anti-interference capacity. The bandgap reference voltage source is of high precision. The voltage comparator controls the conduction and cut-off of the high-side load switch MOS tube by comparing the voltage divider voltage and the reference voltage at the output end of the MOS tube. The forward and reverse bias simulation shows that the circuit has the function of preventing backflow and low forward voltage drop, which can protect the front-end circuit. The whole circuit exhibits low static current loss. It is suitable for the low-loss application scenarios of the narrow-band Internet of Things (NB-IoT). The circuit structure is simple and has budget advantage. The temperature scanning simulation analysis shows that the bandgap reference voltage module presents good temperature stability. The designed ideal diode circuit has higher precision and better temperature characteristics.

Key words : high-side ideal diode;comparator;bandgap reference;temperature scanning