中图分类号：TN710.2文献标识码：ADOI:10.19339/j.issn.1674-2583.2026.02.005
中文引用格式：陈石平，钱英军，朱冠良. 倒置PNP管实现耐高反向电压的高端理想二极管设计［J］.集成电路应用，2026，43（2）：23-28.
英文引用格式：Chen Shiping,Qian Yingjun,Zhu Guanliang. High-side ideal diode design on high reverse voltage tolerance with reverse PNP transistor ［J］.Application of IC，2026，43（2）：23-28.

High-side ideal diode design on high reverse voltage tolerance with reverse PNP transistor

Abstract： In view of the weak reverse voltage resistance of the gate-source of MOS tube and the emitter junction of BJT tube in high-side ideal diodes, they may be broken down when an external high reverse voltage is applied. To solve this problem, this design improves the technical solutions such as the main PMOS tube plus PNP paired tubes, adopts a zener diode and a BJT tube working in an inverted state, and develops a high-side ideal diode with high reverse voltage resistance. The circuit is composed of a main PMOS tube, a comparator, a protection circuit, etc. The zener diode is used to protect the gate-source of the main PMOS tube, and the auxiliary PNP tube V2 at the front end of the comparator is designed to work in an inverted state to protect its emitter junction. The improved circuit is equivalent to a high-side ideal diode. Through the circuit principle analysis and software simulation verification of the two technical schemes, the results show that both schemes have the function of preventing reverse current. The improved circuit proposed in this design has a simple structure, can withstand higher reverse breakdown voltage, only requiring a small increase in material cost with strong practicability.

Key words : high-side ideal diode;reverse state; reverse breakdown voltage; transistor pair