中图分类号：TN322.8文献标识码：ADOI:10.19339/j.issn.1674-2583.2026.03.004
中文引用格式：马广府,陈早军,刘丽敏，等. 基于大功率IGBT的并联均流驱动电路研究［J］.集成电路应用，2026，43（3）：15-17.
英文引用格式：Ma Guangfu,Chen Zaojun,Liu Limin,et al. Research on parallel current sharing drive circuit based on high power IGBT［J］.Application of IC，2026，43（3）：15-17.

Research on parallel current sharing drive circuit based on high power IGBT

Abstract： The parallel application of high-power IGBTs is a key technology to expand the current capacity of power electronic equipment. However, the inherent discrepancies in device parameters and driving inconsistencies can lead to current imbalance, which restricts the system reliability. To analyze the mechanism of parallel current imbalance and design an efficient current-sharing drive circuit, this study begins with an analysis of the causes from both static and dynamic perspectives. Focusing on the engineering implementation improvements of the existing “current sampling + gate regulation” active current-sharing method, an analog closed-loop control scheme with fast response is proposed. The proposed scheme achieves current sharing by real-time monitoring of each branch current and dynamically adjusting the equivalent gate resistance. A small-signal modeling and stability analysis for the constructed closed-loop control system are conducted. The circuit performance is verified using a PLECS simulation model, and compared with both the traditional fixed gate resistance method and the active gate voltage regulation method. Simulation results show that the proposed circuit can effectively reduce the current imbalance to less than 1%, improving the stability and thermal balance of the parallel system, thus providing a reference solution for engineering applications.

Key words : high-power IGBT; parallel current sharing; drive circuit; active gate control; simulation verification