中图分类号： TN722.75 文献标识码： A DOI：10.16157/j.issn.0258-7998.200264 中文引用格式： 李贺，梁坤，刘敏，等. 20 MHz～520 MHz宽带功率放大器的研制[J].电子技术应用，2020，46(8)：1-4，8. 英文引用格式： Li He，Liang Kun，Liu Min，et al. Design of 20 MHz～520 MHz broad-band power amplifier[J]. Application of Electronic Technique，2020，46(8)：1-4，8.
Design of 20 MHz～520 MHz broad-band power amplifier
Li He，Liang Kun，Liu Min，He Ying，Zhang Hui
China Electronics Technology Group Corporation No.58 Research Institute，Wuxi 214072，China
Abstract： GaN, as the new generation semiconductor material, has much wider forbidden bandwidth, higher breakdown voltage, more excellent thermal stability than Si and GaAs, and thus is widely used in the broadband power amplifier design. Based on two GaN RF dies of CREE company are cascaded and the matching circuit is a mixture of centralized and distributed components, a broadband power amplifier is designed in the 20 MHz～520 MHz frequency by using feedback technology to improve band width, RC parallel network to improve stability and micro-strip hybrid matching circuit. The die model and matching circuit are optimized and debugged by the ADS software. In the 20 MHz～520 MHz frequency band, the saturation output power of this power amplifier is more than 9 W, the gain is more than 29.5 dB, the drain efficiency is higher than 40% and the gain flatness is ±0.7 dB.
Key words : GaN；broadband power amplifiers；feedback；saturation output power；gain